基于碳化硅器件微系统封装研究〗进展

田文超; 钱莹莹; 赵静榕; 李昭; 李彬

doi:10.19304/J.ISSN1000-7180.2022.0717

基于碳化硅器件微系统封装研究进展

doi: 10.19304/J.ISSN1000-7180.2022.0717

1.
西安电子科技大学机电工程学院, 陕西西安 710068
2.
上海轩田工业设∮备有限公司, 上海 201109

基金项目: 国家自然科学基金项目（51805400）；西安电子科技大学教∩育教学改革研究项目资助ω（B21011）

详细信息

作者简介:
田文超：男,（1968-）,博士,教授. 研究方向为先进封装与高密度组装、微机电技术

钱莹莹：女,（1997-）,硕士◢研究生.研究方向为电子封装技术. E-mail：1397735326@qq.com

赵静榕：女,（1989-）,硕士¤研究生.研究方向为材料可靠性

李昭：男,（1996-）,博士研究生.研究方╳向为电子封装及可靠性

李彬：男,（1997-）,硕士研究生. 研究方向电子封装及可靠性

中图分类号: TN453
计量
- 文章◥访问数: 15
- HTML全文浏览◤量: 15
- PDF下载量: 1
- 被引次数: 0
出版历程
- 收稿日期: 2022-11-09
- 修回日期: 2022-11-30
- 网络出版日期: 2023-01-18

Research progress of microsystem packaging based on silicon carbide devices

1.
School of Mechanical Electronical and Engineering, Xidian University, Xi’an 710068, China
2.
Shanghai Sharetek Technology Co., ltd., Shanghai 201109, China

摘要

摘要:
SiC由于其优越的材料性能,受到社会的广泛『关注. 传统器件的封装形式制约SiC器件优势的充分发挥,为了解决电、热及绝缘方面的问题,近年来出现了许∑　多对碳化硅功率模块的新型封装技术和方案. 从SiC器件的模块微系统封装技术出发,对SiC器件的封装材料、模块封装结构、封装工艺和应用进行分类和总结,涵盖了提高耐高温能力、降低高频寄生电感、增强散热能力等一系列相关技术. 在此基础上,对SiC器件微系统所面▽临的科学挑战进行了总结,对相关技术的未来发展进行了展望.
- 碳化硅 /
- 封装材料 /
- 模块集成 /
- 封装技术 /
- 微系统
Abstract:
SiC has been widely concerned for its superior material properties. The packaging form of traditional devices restricts the full play of the advantages of SiC devices. To address the issue that the electrical, thermal and insulation performance, new packaging technologies and solutions for SiC devices have emerged in recent years. Based on the modular microsystem packaging technology of SiC devices, the packaging materials, module packaging structure, packaging technology and application of SiC devices are classified and summarized, covering a series of related technologies such as improving high-temperature resistance, reducing high-frequency parasitic inductance, and enhancing heat dissipation performance. Then the scientific challenges of silicon carbide devices are summarized. Finally, the future development trend of related technologies is prospected.
- Silicon carbide /
- packaging material /
- module integration /
- packaging technology /
- microsystem

HTML全文

图 1 铝铜复合带键合

Figure 1. Aluminum-copper composite band bonding

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图 2 SiC模块的优化设计

Figure 2. Optimized design of SiC modules

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图 3 “双端源”功率模块结构

Figure 3. Double-End sourced power module construction

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图 4 混合包装结构示意图

Figure 4. Hybrid packaging structure

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图 5 DLB结构

Figure 5. Direct lead bonding structure

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图 6 SKiN结构

Figure 6. SKiN structure

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图 7 陶瓷嵌入式的电源模块结构

Figure 7. Structural schematic of ceramic embedded power module

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图 8 PCB嵌入式SiC MOSFET封装结构示意图

Figure 8. Structure schematic of the PCB-embedded SiC MOSFETs package

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图 9 SiPLIT结构

Figure 9. SiPLIT structure

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图 10 2.5D模块封装结构

Figure 10. 2.5D module packaging structure

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图 11 PCoC封装结构

Figure 11. Power Chip-on-Chip structure

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图 12 PCoI封装结构示意图

Figure 12. Power Chip-on-Inductor structure

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图 13 Cu微柱封装结构示意图

Figure 13. Schematic of Cu micro-post interconnection

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图 14 晶圆级直接键合工艺

Figure 14. Wafer-level packaging

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图 15 电源模块图

Figure 15. Power module diagram

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图 16 电源设备和栅极驱动器之间的TSV互联可能性】

Figure 16. TSV interconnection possibilities between the power device and gate drivers

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图 17 SiC电源模块的装配工艺流程

Figure 17. Fabrication and assembly flow of the proposed SiC power module

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图 18 典型ξ　电源模块设计

Figure 18. Typical power module structure

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图 19 铝线键合外观

Figure 19. Aluminum wire bonding

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图 20 铜与铝带键合和铜线键合

Figure 20. Copper bonded with Aluminum strip and Copper wire bonding

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图 21 IGBT压焊结构示意图

Figure 21. Internal construction of a press-pack IGBT

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图 22 铜夹焊封装结构

Figure 22. Structure diagram of Cu clip bonding package

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表 1 陶瓷基板主要【热、机械和电气性能对比

Table 1. Comparison of the main thermal, mechanical and electrical properties of ceramic substrates

特性	Si₃N₄	AlN	Al₂O₃	BeO
介电常数	8~9	8~9	9~10	6~8
损耗因数	2×10^?4	3×10^?4	3×10^?4 1×10^?3	3×10^?4
电阻率/（Ω·m）	>10¹²	>10¹²	>10¹²	>10¹²
介电强度/（kV/mm）	10~25	14~35	10~35	27~31
导热系数/（W/m·K）	40~90	120~180	20~30	209~330
弯曲强度/（MPa）	600~900	250~350	300~380	≥250
杨氏模量/（GPa）	200~300	300~320	300~370	330~400
断裂韧性/ （MPa·m^1/2）	4~7	2~3	3~5	1~2.5
热膨胀系数/ （mm/m·K）	2.7~4.5	4.2~7	7~9	7~8.5

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表 2 键合点♀结合强度控制标准

Table 2. Bonding point bond strength control standard

线径/μm	拉力/g	剪切力/g
125	>75	>200
200	>200	>400
250	>300	>600
300	>400	>1 000
375	>600	>1 200
50	>1 000	>2 000

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